MDCAT Physics MCQS Electronics Online Test 4
the-potential-barrier-for-silicon-at-room-temperature-is-3-a_-_0-7-v,the-potential-barrier-for-silicon-is-3-a_-_0-7-v,the-potential-barriers-for-germanium-at-room-temperature-is-3-a_-_0-3-v,the-potential-difference-across-the-depletion-region-of-germanium-is-3-a_-_0-3-v,the-ratio-3-f-in-transistor-is-called-3-a_-_current-gain,the-ratio-of-potential-barriers-of-ge-to-si-at-room-temperature-is-3-a_-_0-129861111,the-resistance-between-the-inverting-28-29-and-non-inverting-inputs-is-called-input-resistance-and-is-the-order-of-3-a_-_kilo-ohms,the-size-of-base-in-a-transistor-is-3-a_-_10-3-csup-3-e-6-3-c-2-fsup-3-em,the-size-of-base-of-transistor-is-3-a_-_10-3-csup-3-e-6-3-c-2-fsup-3-em,the-term-invertor-is-used-for-3-a_-_nor-gate,the-thickness-of-base-in-a-transistor-is-of-the-order-of-3-a_-_10-3-csup-3-e-6-3-c-2-fsup-3-em,the-use-of-ldr-is-in-the-circuit-of-3-a_-_high-switch,the-value-of-potential-barrier-for-silicon-at-room-temperature-is-3-a_-_0-7-v,the-width-of-central-region-of-a-transistor-is-3-a_-_10-3-csup-3-e-6-3-c-2-fsup-3-em,transistor-was-discovered-by-3-a_-_john-bardeen,transistors-are-made-from-3-a_-_doped-semi-condcutors,truth-table-of-logic-function-3-a_-_display-all-its-input-and-output-possibility,voltage-gain-of-the-common-emitter-npn-transistor-as-an-amplifier-is-3-a_-_3-fr-3-csub-3-eie-3-c-2-fsub-3-e-2-fr-3-csub-3-ec-3-c-2-fsub-3-e,when-a-pn-junction-is-reverse-biased-the-depletion-region-is-3-a_-_widened,which-component-of-the-transistor-has-greater-contration-of-impurity-3-a_-_collector,x-3-da-2-bb-is-the-mathematical-notation-for-3-a_-_nor-gate
Questions | 21 |
---|---|
Available | Always |
Pass rate | 45 % |
Backwards navigation | Allowed |